Document Type
Article
Source Publication Title
Applied Physics Letters
Abstract
Transformation of the electrical transport from the Efros and Shklovskii [J. Phys. C 8, L49 (1975)] variable range hopping to the “hard gap” resistance was experimentally observed in a low temperature range as the Fe compositions in Zn1−xFexO1−v ferromagnetic semiconductor films increase. A universal form of the resistance versus temperature, i.e., ρ∝exp[TH/T+(TES/T)1/2], was theoretically established to describe the experimental transport phenomena by taking into account the electron-electron Coulomb interaction, spin-spin exchange interaction, and hard gap energy. The spin polarization ratio, hard gap energy, and ratio of exchange interaction to Coulomb interaction were obtained by fitting the theoretical model to the experimental results. Moreover, the experimental magnetoresistance was also explained by the electrical transport model.
Disciplines
Physical Sciences and Mathematics | Physics
Publication Date
11-16-2006
Language
English
License
This work is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 4.0 International License.
Recommended Citation
Tian, Y.F.; Yan, Shi-Shen; Zhang, Y.P.; Song, H.Q.; Ji, G.; Liu, G.L.; Mei, M.L.; Liu, J. Ping; Altuncevahir, B.; Chakka, V.; and Chen, Y.X., "Transformation of electrical transport from variable range hopping to hard gap resistance in Zn[subscript]1−[subscript]xFe[subscript]xO[subscript]1[subscript]v magnetic semiconductor films" (2006). Physics Faculty Publications. 4.
https://mavmatrix.uta.edu/physics_facpubs/4