Graduation Semester and Year
Spring 2025
Language
English or Mandarin
Document Type
Dissertation
Degree Name
Doctor of Philosophy in Electrical Engineering
Department
Electrical Engineering
First Advisor
Robert Magnusson
Abstract
This dissertation explores advanced strategies for enhancing Raman amplification in silicon photonic devices, focusing on guided-mode resonance engineering and resonant mode manipulation. Silicon, despite its indirect bandgap, exhibits a strong Raman scattering coefficient, enabling it to function as a viable gain medium for integrated photonic systems. However, the realization of efficient, compact, and low-threshold silicon Raman amplifiers and lasers necessitates innovative design approaches that overcome inherent material and structural limitations.
The first chapter provides a fundamental overview of optics, including physical principles, spectral characteristics, guided-mode resonance, simulation methods, and nanopattern fabrication methods.
The second chapter delves into silicon-based Raman amplification within photonic crystal nanocavities, waveguide, and surface-enhanced Raman scattering. This chapter analyzes the design and performance of the coupled-cavity arrays that achieve both high Q factors and strong mode confinement, facilitating low-threshold Raman generation. Complementary works are discussed to highlight various cavity geometries, mode interactions, and fabrication strategies that contribute to optimizing Raman efficiency.
The third chapter introduces the idea, design, and experimental results of guided mode resonance (GMR) Raman nanopattern as a potential mechanism for light confinement and field enhancement in silicon gratings. By properly selecting the angle of incident of light, the Raman shift in silicon is matched through the two split resonant modes. The interplay between GMR and Raman amplification is investigated through the design of nanogratings that support ultra-narrowband resonances with the silicon core.
The fourth chapter examines the integration of bound states in the continuum (BICs) with GMR-based Raman devices. By engineering grating parameters to simultaneously support two BIC modes separated by the intrinsic Raman shift of silicon (~15.6 THz), a dual-resonant configuration is realized. This structure enables high Q factors and Raman enhancement under near-normal incidence, demonstrating the potential of BIC-GMR hybrids as a new paradigm for chip-scale nonlinear optical devices.
The fifth chapter extends the investigation to the development of broadband infrared reflectors operating in the mid-infrared (MIR) and long-wave infrared (LWIR) regimes. Both one-dimensional and two-dimensional grating-based designs are analyzed with an emphasis on achieving wideband reflectivity and polarization-independent operation. These reflectors serve not only as functional photonic components for infrared applications but also as foundational structures for future integration with nonlinear optical devices.
Together, these chapters form a unified effort to push the boundaries of silicon photonics through advanced nanostructure design and resonant photonic engineering, paving the way toward compact, efficient, and versatile Raman-active devices across a wide range of optical frequencies.
Keywords
Guided-mode resonance, Nanophotonics, Raman generation, Infrared reflector, Meta-surface, Nano-micro fabrication
Disciplines
Electromagnetics and Photonics | Nanotechnology Fabrication
License
This work is licensed under a Creative Commons Attribution-NonCommercial-No Derivative Works 4.0 International License.
Recommended Citation
Chen, RenJie, "GUIDED-MODE RESONANT NANOPATTERNS FOR RAMAN GENERATION AND PHOTONIC DEVICES" (2025). Electrical Engineering Dissertations. 406.
https://mavmatrix.uta.edu/electricaleng_dissertations/406