Document Type
Article
Source Publication Title
Applied Physics Letters (American Institute of Physics)
First Page
94101
DOI
http://doi.org10.1063/1.3484964
Abstract
Giant resistance switching behavior in mixed conductive LaBaCo2O5+ epitaxial thin film were discovered in high temperature and reducing environments during the reduction and reoxidation process. A reproducible resistance response of over 99% was achieved in the films during a change of 4% H2 /96% N2 to oxygen at temperature range of 400– 780 °C. The results indicate that at, low oxygen partial pressure, the extension of oxygen deficiency is an essential factor to the high temperature physical properties of LaBaCo2O5+ and demonstrates its potential application as a chemical sensor device for reducing environments at high temperature. © 2010 American Institute of Physics. doi:10.1063/1.3484964 Giant resistance switching behavior in mixed conductive LaBaCo2O5+ epitaxial thin film were discovered in high temperature and reducing environments during the reduction and reoxidation process. A reproducible resistance response of over 99% was achieved in the films during a change of 4% H2 /96% N2 to oxygen at temperature range of 400– 780 °C. The results indicate that at, low oxygen partial pressure, the extension of oxygen deficiency is an essential factor to the high temperature physical properties of LaBaCo2O5+ and demonstrates its potential application as a chemical sensor device for reducing environments at high temperature.
Disciplines
Engineering | Materials Science and Engineering
Publication Date
9-1-2010
Language
English
License
This work is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 4.0 International License.
Recommended Citation
Liu, Jian; Collins, Gregory; Liu, Ming; Chen, C L.; Jiang, Jiechao; Meletis, Efsftathios; Zhang, Qingyu; and Dong, Chuang, "PO2 dependant resistance switch effect in highly epitaxial (LaBa)Co2O5+[delta] thin films" (2010). Material Science and Engineering Faculty Publications. 1.
https://mavmatrix.uta.edu/materialscieng_facfubs/1
Comments
© 2010 American Institute of Physics