Large-area InP-based crystalline nanomembrane flexible photodetectors

Document Type

Article

Source Publication Title

Applied Physics Letters

First Page

121107

Abstract

Large-area (3x3 mm2) flexible photodetectors were realized, based on crystalline InP semiconductor nanomembranes transferred to flexible polyethylene terephthalate substrates. Very low dark current a few microamperes and high responsivity 0.12 A/W were demonstrated for flexible InP p-i-n photodetectors. Bending characteristics were also investigated for this type of flexible crystalline semiconductor photodetector, and it was found that, whereas the dark current was independent of bending radii, the photocurrent degraded, depending on the bending radii. © 2010 American Institute of Physics.

Disciplines

Electrical and Computer Engineering | Engineering

Publication Date

3-25-2010

Language

English

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