Graduation Semester and Year

2010

Language

English

Document Type

Thesis

Degree Name

Master of Science in Electrical Engineering

Department

Electrical Engineering

First Advisor

Alan W. Davis

Abstract

An RF ultra wide band low noise amplifier designed for the frequency range of 12-18 GHz of operation is presented in this paper. The low noise amplifier is designed using the state-of-the-art complementary metal oxide semiconductor 45 nm technology. Berkeley's Predictive Technology Model (PTM) is used to generate a fairly accurate mathematical model and the SPICE data is implemented into the BSIM 4 version of the Advanced Design Systems (ADS) program. The low noise design strategy is mainly based on the analysis of high frequency CMOS operation. This LNA has two stages: the first stage is a RL feedback amplifier with an inductive load, and the second stage is a RC feedback amplifier with an inductive load. High frequency small signal MOSFET models with shunt-shunt feedback are used to determine the input impedance, output impedance and gain equations governing this circuit. Simulation results of this two stage feedback amplifier demonstrate a gain of 19 dB over a 6 GHz bandwidth, high linearity, and a low noise figure - less than 2.4 dB. This is a low voltage high current amplifier which requires a supply voltage of simply 0.5 V and has low power consumption (~13.5 mW).

Disciplines

Electrical and Computer Engineering | Engineering

Comments

Degree granted by The University of Texas at Arlington

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