Yu-Nung Huang

Graduation Semester and Year

2011

Language

English

Document Type

Thesis

Degree Name

Master of Science in Materials Science and Engineering

Department

Materials Science and Engineering

First Advisor

Michael Jin

Abstract

The Al-doped ZnO (AZO)/Cu2O semi-transparent heterojunction was realized by an RF sputtering at low temperature in this study. Specifically, the usage of a buffer layer in the junction structure has been found as a key factor influencing the carrier transport mechanisms and performance of the junction. First, the chemical bath deposition (CBD) has been utilized in depositing an intrinsic ZnO (i-ZnO) buffer layer in order to entirely avoid potential plasma damage from a subsequent sputter deposition process. Increasing pH of CBD solution was critical in delaying the formation of detrimental ZnOHx particles in the solution and the assistance of ultrasonication improved the uniformity of i-ZnO further by minimizing the adherence of ZnOHx particles on the growing surface of i-ZnO. The deposition of i-ZnO buffer layer on top of AZO prior to the sputter deposition of Cu2O produced rectifying junctions by reducing the tunneling of charge carriers through interface defects at the junction. Yet, it is concluded that the presence of the defects at the junction cannot be avoided due to the lattice mismatch between Cu2O and ZnO limiting the performance of the device intrinsically.

Disciplines

Engineering | Materials Science and Engineering

Comments

Degree granted by The University of Texas at Arlington

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