Patrick Conlin

Document Type

Honors Thesis


Transition Metal Oxides (TMOs) that exhibit metal-insulator transitions have tremendous potential for use in future electronic devices. Understanding how metalinsulator transitions can be controlled on silicon is an essential first step in the development of such devices. Here we explore the effects of epitaxial strain, imparted by a silicon substrate, on the metal-insulator transition exhibited by La0.5Sr0.5TiO3 sandwiched between layers of SrTiO3. By varying the thickness of the SrTiO3 layer situated between the La0.5Sr0.5TiO3 and silicon substrate, the strain on the La0.5Sr0.5TiO3 layer can be tuned. This tuning of the strain can induce a change in the metal-insulator transition of La0.5Sr0.5TiO3, as demonstrated through low temperature magneto-transport measurements. The development of the instrumentation necessary to take these measurements is the primary focus of this thesis.

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Creative Commons Attribution 4.0 International License
This work is licensed under a Creative Commons Attribution 4.0 International License.



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