A High Fill Factor CMOS Image Sensor For IR Camera Applications

Author

Daniel McBride

Graduation Semester and Year

2010

Language

English

Document Type

Thesis

Degree Name

Master of Science in Electrical Engineering

Department

Electrical Engineering

First Advisor

Sungyong Jung

Abstract

In this thesis, a unit cell for high-SNR applications is presented. The proposed circuit is significantly smaller than other circuits that perform dark current subtraction because less circuitry is used inside the unit cell. The proposed circuit uses only two transistors and one resistor inside each unit cell to suppress the dark current. The size of the circuit in the layout is 25 um x 25 µm. With this new unit cell and routing approach, the size of the unit cell was reduced by 300% compared to other circuits which also suppress dark current.

Disciplines

Electrical and Computer Engineering | Engineering

License

This work is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 4.0 International License.

Comments

Degree granted by The University of Texas at Arlington

Recommended Citation

McBride, Daniel, "A High Fill Factor CMOS Image Sensor For IR Camera Applications" (2010). Electrical Engineering Theses. 255.
https://mavmatrix.uta.edu/electricaleng_theses/255