Graduation Semester and Year

Spring 2024



Document Type


Degree Name

Master of Science in Electrical Engineering


Electrical Engineering

First Advisor

Dr. Zeynep Celik


There is a need to understand the physical mechanisms for excess noise factor (F) in avalanche diodes for all regions of operation. The current classical theory accounts for F only for low carrier multiplication where single carrier injection starts the avalanche process. Our model fits the white noise exhibited by reverse-biased avalanche diodes in the entire operation region of four orders of current magnitude. In this sense, it is a first. The measured noise data was provided by Texas Instruments. We fitted the measured noise components with the calculated noise components where carrier multiplication takes place. The least squared error method was used to fit the measured and calculated noise components. The noise components were fitted in the lower currents considering single carrier injection while mixed carrier injection was considered for higher currents. Later, with physical mechanism reasoning, the noise trend was deduced with respect to the reverse diode current.


Avalanche breakdown, Avalanche diodes, Single carrier injection, Mixed carrier injection


Electronic Devices and Semiconductor Manufacturing

Available for download on Saturday, May 09, 2026