Depth-Resolved Defect Characterization of Multi-Layer Thin-Film Semiconductor Materials via Positron Annihilation Spectroscopy

Author

Jack Driscoll

ORCID Identifier(s)

0009-0003-6387-9729

Graduation Semester and Year

2023

Language

English

Document Type

Thesis

Degree Name

Master of Science in Physics

Department

Physics

First Advisor

Ali Koymen

Abstract

Positron annihilation spectroscopy has frequently been used to perform depth-resolved defect characterization. In this thesis, the application of UTA's advanced positron beam to conduct depth-resolved defect studies on multi-layer semiconductor thin-film materials is demonstrated.

Keywords

Semiconductor, Positron, Defect

Disciplines

Physical Sciences and Mathematics | Physics

License

This work is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 4.0 International License.

Comments

Degree granted by The University of Texas at Arlington

Recommended Citation

Driscoll, Jack, "Depth-Resolved Defect Characterization of Multi-Layer Thin-Film Semiconductor Materials via Positron Annihilation Spectroscopy" (2023). Physics Theses. 73.
https://mavmatrix.uta.edu/physics_theses/73