Graduation Semester and Year
Fall 2026
Language
english
Document Type
Thesis
Degree Name
Master of Science in Electrical Engineering
Department
Electrical Engineering
First Advisor
Dr. Liwei Zhou
Abstract
The rapid expansion of electric vehicle (EV) charging infrastructure has increased the demand for efficient and reliable power electronic converters. Semiconductor device selection is critical to system performance, influencing efficiency, power density, and reliability. This thesis presents a comparative analysis of Silicon (Si) Insulated Gate Bipolar Transistors (IGBTs) and Silicon Carbide (SiC) MOSFETs in a representative EV charging converter, with emphasis on electrical performance and thermal behavior under identical operating conditions.
The research employs PLECS (Plexim) and electro-thermal simulation models to accurately characterize device and system interactions. The converter configuration consists of a grid-connected voltage source inverter (VSI) that maintains a stable DC-link voltage and supplies a dual active bridge (DAB) converter for isolated DC–DC conversion. A variable load profile is implemented to replicate realistic and dynamic power demands, enabling analysis across a range of operating points pertinent to EV charging applications.
The comparative study evaluates conduction losses, switching losses, total power dissipation, and thermal management of semiconductor devices. Simulation results indicate that SiC MOSFETs exhibit lower switching and overall losses than Si IGBTs, particularly at elevated switching frequencies. SiC devices also demonstrate greater thermal stability, reduced junction temperature rise, and more consistent performance across varying load conditions. Conversely, Si IGBTs experience higher switching losses and are more susceptible to performance degradation under dynamic operating conditions, resulting in increased thermal stress.
In summary, the findings demonstrate that converters utilizing SiC MOSFETs achieve higher efficiency and superior thermal management, rendering them preferable for high-power, high-frequency EV charging systems. These results support the adoption of wide-bandgap semiconductor devices in future power conversion system designs.
Keywords
Electric vehicle charging, Dual active bridge (DAB) converter, Silicon Carbide MOSFET, Silicon IGBT, Power loss analysis, Switching losses, Electro-thermal modeling, PLECS simulation
Disciplines
Electrical and Electronics | Electronic Devices and Semiconductor Manufacturing | Power and Energy
License
This work is licensed under a Creative Commons Attribution 4.0 International License.
Recommended Citation
kahn, Muhammad A., "Comparative Analysis of EV-Charging Converters using Silicon Carbide MOSFETs and Silicon IGBT’s" (2026). Electrical Engineering Theses. 5.
https://mavmatrix.uta.edu/electricaleng_theses2/5
Included in
Electrical and Electronics Commons, Electronic Devices and Semiconductor Manufacturing Commons, Power and Energy Commons
Comments
I sincerely thank all individuals and institutions that contributed to the completion of this thesis.
I am deeply grateful to my supervisor, Prof. Liwei Zhou, for his continuous guidance, technical expertise, and unwavering support throughout this research. His insightful feedback, constructive discussions, and encouragement at every stage significantly shaped the direction and quality of this work. His mentorship enhanced my understanding of power electronics and wide-bandgap devices, fostering a more rigorous and analytical approach to my research.
I also wish to thank the faculty of the Electrical Engineering Department for providing a strong academic foundation and fostering a supportive learning environment. The knowledge gained from their courses equipped me with the necessary background to conduct this research effectively.
I am grateful to my colleagues and peers for their valuable discussions, suggestions, and support throughout my research. Their willingness to share ideas and assist in problem-solving significantly contributed to the development and refinement of this thesis.
I would also like to acknowledge the use of PLECS (Plexim) software, which was essential for conducting accurate electro-thermal simulations and comparative analyses. Access to this advanced tool enhanced the thoroughness and reliability of the study’s results.
Finally, I thank my family for their unwavering encouragement, patience, and emotional support throughout my studies. Their belief in me and continuous motivation provided the strength and determination necessary to complete this work.
This achievement would not have been possible without the guidance, assistance, and support of all those acknowledged above. I am sincerely grateful to each of them.