Estimation Of Thermal Impedance Parameters Of Silicon Germanium Heterojunction Bipolar Transistors

Author

Arun Thomas Karingada

Graduation Semester and Year

2011

Language

English

Document Type

Thesis

Degree Name

Master of Science in Electrical Engineering

Department

Electrical Engineering

First Advisor

Ronald L Carter

Abstract

Silicon Germanium (SiGe) hetero junction bipolar transistors (HBTs) are used in a variety of circuits like analog mixed signal and RF(radio frequency ) circuits. As the device gets smaller these days the self heating affects the performance of the SiGe HBTs. This paper uses theoretical methods based on device geometry and material properties to calculate the thermal resistance and thermal capacitance of SiGe HBT. In addition to theoretical estimations time domain, frequency domain and DC measurements are done on National Semiconductor's CBC8 HBTs which is used to extract the values of thermal impedance parameters.

Disciplines

Electrical and Computer Engineering | Engineering

License

This work is licensed under a Creative Commons Attribution-NonCommercial-Share Alike 4.0 International License.

Comments

Degree granted by The University of Texas at Arlington

Recommended Citation

Karingada, Arun Thomas, "Estimation Of Thermal Impedance Parameters Of Silicon Germanium Heterojunction Bipolar Transistors" (2011). Electrical Engineering Theses. 322.
https://mavmatrix.uta.edu/electricaleng_theses/322